A complete methodology for determining the influence of the design for 3.3 kV silicon carbide diodes : JBS compared to Schottky
Résumé
The paper presents the design and the characterization of Schottky and JBS diodes, for high voltage matching. Design for manufacturing has been preferred and diodes have been fabricated following a semi-industrial methodology. Then electrical characterization was performed on devices : static characterization, including temperature influence, dynamic characterization in a buck-like con-figuration to evaluate the behavior in switching mode and C-V characterization to identify some parameters like the junction area. Whereas forward conduction is provided with low on-state re-sistance, 3.3 kV capability is demonstrated with low leakage current, low turn-on and low turn-off delays.
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