Work Function Tuning of TixSiyNz Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electrochemical and Solid-State Letters Année : 2009

Work Function Tuning of TixSiyNz Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition

Résumé

In this article, the achievement of TixSiyNz metal gates with tunable work function is demonstrated using partial saturation during pulsing chemical vapor deposition. Thin films were deposited on SiO2 using a pulse sequence with tetrakisdimethyl amido titanium, NH3, and SiH4 precursors. By adjusting the silane pulse, the chemisorption kinetics of silane on the surface is finely tuned to control the composition of TixSiyNz layers. Their effective work functions were measured in metal-oxide-semiconductor capacitors. Results indicate that the effective work function can be accurately monitored in the range of 4.35-4.60 eV by adjusting the silane pulse time.

Domaines

Matériaux
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Dates et versions

hal-01067596 , version 1 (23-09-2014)

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Citer

F. Fillot, S. Maitrejean, F. Pierre, Bernard Chenevier. Work Function Tuning of TixSiyNz Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition. Electrochemical and Solid-State Letters, 2009, 12 (7), pp.H272-H274. ⟨10.1149/1.3126495⟩. ⟨hal-01067596⟩
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