In this article, the achievement of TixSiyNz metal gates with tunable work function is demonstrated using partial saturation during pulsing chemical vapor deposition. Thin films were deposited on SiO2 using a pulse sequence with tetrakisdimethyl amido titanium, NH3, and SiH4 precursors. By adjusting the silane pulse, the chemisorption kinetics of silane on the surface is finely tuned to control the composition of TixSiyNz layers. Their effective work functions were measured in metal-oxide-semiconductor capacitors. Results indicate that the effective work function can be accurately monitored in the range of 4.35-4.60 eV by adjusting the silane pulse time.