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Article Dans Une Revue Applied Physics Letters Année : 2014

On the effect of δ-doping in self-switching diodes

Résumé

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different δ-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 × 1012 cm−2 to 1.5 × 1012 cm−2 (−44%), the noise equivalent power (NEP) improved from 130 pW/Hz½ to 87 pW/Hz½ (−33%).
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Dates et versions

hal-01061584 , version 1 (27-05-2022)

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Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, et al.. On the effect of δ-doping in self-switching diodes. Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩
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