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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2014

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Résumé

In this paper, terminal capacitances of a normally-on SiCED-JFET are measured, analyzed and simulated. All these capacitances are measured using an auto-balanced (guarded) capacitance test-bench that leads to the standard 3-terminal model capacitors CGS, CDS and CGD. This test bench is developed to measure each capacitance individually, without any mutual influence. 2D finite-element simulations are used to show that the capacitance CGD cannot be modeled by a standard planar junction model. This is due to the influence of two dimensional effects around the buried layer P+. A new analytical model of CGD is proposed. A good agreement is obtained between simulations and measurements of the different capacitances.

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Autre

Dates et versions

hal-01005929 , version 1 (13-06-2014)

Identifiants

Citer

Sami Ghedira, Cyril Buttay, Hervé Morel, Kamel Besbes. Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET. European Physical Journal: Applied Physics, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩. ⟨hal-01005929⟩
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