Integrated packaging allows for improvement in switching characteristics of silicon carbide devices
Résumé
Silicon Carbide devices can achieve very high switching speed, but that requires specific packaging solutions. In this paper, we discuss the effects of parasitic devices on the switching behaviour. Three different prototypes are then presented, offering three different packaging and integration approaches (low inductance packaging, integration of the gate drivers, integration of common-mode filtering). The consequences on the switching speed are discussed.
Domaines
Energie électrique
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article_PCIM_format.pdf (432.34 Ko)
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presentation.pdf (2.68 Mo)
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| Origine | Fichiers produits par l'(les) auteur(s) |
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| Format | Autre |
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