DC and noise performances of SOI FinFETs at very low temperature
Résumé
In this work, DC and noise measurements in strained and unstrained SOI FinFET were performed in order to evaluate the device performances at cryogenic temperatures (10 K). The main electrical parameters (threshold voltage, subthreshold swing, mobility, etc...) are investigated. The study of the low frequency noise clearly shows that the 1/f noise is governed by the carrier number fluctuations even at cryogenic temperatures for p-channel devices
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B21_EUROSOI_2012_DC_and_Noise_Performances_of_SOI_FinFET_at_Very_Low_Temperature.pdf (144.44 Ko)
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