Low-frequency noise behavior in P-channel SOI FinFETs processed with different strain techniques - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

Low-frequency noise behavior in P-channel SOI FinFETs processed with different strain techniques

Résumé

The aim of this paper is to investigate the low-frequency noise behavior in p-channel SOI FinFETs processed with different strain techniques. An unusual noise behavior was observed for all devices studied. This unusual noise was investigated for different applied gate voltages and different channel lengths at room temperature. The carrier number fluctuations explain the flicker noise for all devices. The different strain techniques employed have no significant impact in the noise level.
Fichier principal
Vignette du fichier
hal-00993748.pdf (393.99 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00993748 , version 1 (22-07-2014)

Identifiants

  • HAL Id : hal-00993748 , version 1

Citer

Wei Guo, Rachida Talmat, Bogdan Cretu, Jean-Marc Routoure, Régis Carin, et al.. Low-frequency noise behavior in P-channel SOI FinFETs processed with different strain techniques. 20th International Conference on Noise and Fluctuations, Jun 2009, Pista, Italy. p.295-298. ⟨hal-00993748⟩
120 Consultations
179 Téléchargements

Partager

Gmail Facebook X LinkedIn More