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Communication Dans Un Congrès Année : 2012

Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz

Résumé

This paper presents a combined pulsed I(V) - pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the save operating area (SOA) of advanced SiGe:C HBTs. System configuration, measurements and accuracy issues are presented.
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Dates et versions

hal-00978793 , version 1 (14-04-2014)

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  • HAL Id : hal-00978793 , version 1

Citer

Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, et al.. Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz. Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, Sep 2012, Bordeaux, France. ⟨hal-00978793⟩
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