Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz - Archive ouverte HAL
Communication Dans Un Congrès Année : 2012

Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz

Résumé

This paper presents a combined pulsed I(V) - pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the save operating area (SOA) of advanced SiGe:C HBTs. System configuration, measurements and accuracy issues are presented.

Domaines

Micro et nanotechnologies/Microélectronique

sebastien fregonese  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00978793

Soumis le : lundi 14 avril 2014-16:55:10

Dernière modification le : mercredi 15 novembre 2023-13:14:27

Fichier non déposé

Dates et versions

hal-00978793 , version 1 (14-04-2014)

Identifiants

  • HAL Id : hal-00978793 , version 1

Citer

Mario Weis, Sebastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, et al.. Pulsed I(V) pulsed RF measurement system for microwave device characterization with 80ns/45GHz. Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, Sep 2012, Bordeaux, France. ⟨hal-00978793⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS IMS-BORDEAUX IMS-BORDEAUX-FUSION
112 Consultations
0 Téléchargements

Partager

More