Thermal modeling and measurements of AlGaN/GaN HEMTs including Thermal Boundary Resistance - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2010

Thermal modeling and measurements of AlGaN/GaN HEMTs including Thermal Boundary Resistance

Raphaël Sommet
Guillaume Mouginot
  • Fonction : Auteur
Raymond Quéré
Z. Ouarch
  • Fonction : Auteur
S. Heckmann
  • Fonction : Auteur
M. Camiade
  • Fonction : Auteur

Résumé

In this paper an analysis of thermal behavior of microwave power AlGaN/GaN HEMTs has been carried out through pulsed current-voltage (PIV) measurements and S parameters. A special care about trapping effects has been followed where it is shown Error! Reference source not found. that the thermal resistance of the device can be accurately determined provided that some assumptions on the trapping behavior of the device are verified. The values obtained have been checked by three dimensional finite element (3D-FE) simulations. Finally, the Thermal Boundary Resistance (TBR) between GaN/SiC has been extracted and compared to literature. The results we have obtained are in line with what can be found.

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-00917787 , version 1 (12-12-2013)

Identifiants

  • HAL Id : hal-00917787 , version 1

Citer

Raphaël Sommet, Guillaume Mouginot, Raymond Quéré, Z. Ouarch, S. Heckmann, et al.. Thermal modeling and measurements of AlGaN/GaN HEMTs including Thermal Boundary Resistance. Thermal Investigations of ICs and Systems (THERMINIC), 2010 16th International Workshop on, Oct 2010, Barcelona, Spain. pp.1-5. ⟨hal-00917787⟩

Collections

UNILIM CNRS XLIM
58 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More