Measurement of thermal impedance of GaN HEMTs using 3 omega method - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2012

Measurement of thermal impedance of GaN HEMTs using 3 omega method

Mustafa Avcu
  • Fonction : Auteur
Raphaël Sommet
Jean-Pierre Teyssier
  • Fonction : Auteur
  • PersonId : 914307
Abdelkader El Rafei
  • Fonction : Auteur
Raymond Quéré

Résumé

This reported work deals with an accurate characterisation method dedicated to the determination of the thermal impedance of gallium nitride based high electron mobility transistors (GaN HEMTs). The method is inspired by the '3omega method' initially proposed by Cahill (reference 8 of this Letter) in order to measure the thermal conductivity of bulk materials or layers and the present authors' previous works on thermal resistance measurements. It is demonstrated that the voltage oscillation at the third harmonic is a real image of the thermal impedance of the device in the frequency domain. Both the theoretical approach and the test bench are discussed.

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-00917677 , version 1 (12-12-2013)

Identifiants

Citer

Mustafa Avcu, Raphaël Sommet, Jean-Pierre Teyssier, Guillaume Callet, Abdelkader El Rafei, et al.. Measurement of thermal impedance of GaN HEMTs using 3 omega method. Electronics Letters, 2012, 48 (12), pp.708-710. ⟨10.1049/el.2012.0979⟩. ⟨hal-00917677⟩

Collections

UNILIM CNRS XLIM
177 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More