Electrical properties of high value doped polysilicon-based resistors - Archive ouverte HAL Access content directly
Journal Articles Solid State Phenomena Year : 2003
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hal-00913032 , version 1 (03-12-2013)

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  • HAL Id : hal-00913032 , version 1

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H. Mahfoz-Kotb, Anne-Claire Salaün, Tayeb Mohammed-Brahim, F. Bendriaa, France Le Bihan, et al.. Electrical properties of high value doped polysilicon-based resistors. Solid State Phenomena, 2003, 93, pp.453-458. ⟨hal-00913032⟩
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