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Article Dans Une Revue Materials Science Forum Année : 2012

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

Romain Esteve
  • Fonction : Auteur
Mihai Lazar
Dominique Tournier
Davy Carole

Résumé

In this work we report on SiC epitaxial growth by vapour-liquid-solid (VLS) mechanism on on-axis 4H-SiC(0001) substrates which were previously patterned to form mesa structures. The liquid phase was set to Al 70Si 30. At 1100°C, it led to very high homoepitaxial lateral growth (140 μm/h) with pronounced spiral growth and in plane anisotropy of growth rate. Upon temperature increase to 1200 °C, this spiral growth was suppressed and the lateral growth was further increased up to 180 μm/h. The in-plane versus out-of-plane anisotropy of growth rate was found to be as high as 60 at this temperature and 46 at 1100°C.
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Dates et versions

hal-00803063 , version 1 (20-03-2013)

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Jean Lorenzzi, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate. Materials Science Forum, 2012, 717-720, pp.165-168. ⟨10.4028/www.scientific.net/MSF.717-720.165⟩. ⟨hal-00803063⟩
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