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Article Dans Une Revue Materials Science Forum Année : 2013

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Résumé

This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and haracterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical haracteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.
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Dates et versions

hal-00803057 , version 1 (20-03-2013)

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Florian Chevalier, Pierre Brosselard, Dominique Tournier, G. Grosset, L. Dupuy, et al.. Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET. Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩. ⟨hal-00803057⟩
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