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Chapitre D'ouvrage Année : 2011

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

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hal-00799648 , version 1 (12-03-2013)

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  • HAL Id : hal-00799648 , version 1

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F Medjdoub. GaN-based on large diameter Si substrate for next generation of high power/high temperature devices. Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩
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