Article Dans Une Revue Electronics Letters Année : 2012

Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band

Jérôme Chéron
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Michel Campovecchio
Denis Barataud
Tibault Reveyrand
Philippe Eudeline
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D. Floriot
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Résumé

Reported is a design methodology to efficiently control source and load impedances of a power GaN HEMT at the second-harmonic frequency inside a metal ceramic package. Second-harmonic source control is more precisely investigated. A specific filter is implemented at the gate side within the package to transform external source impedances into negative reactances seen by the internal device at second-harmonic frequencies. Whatever the external source termination presented at second-harmonic frequencies, source impedances seen by the internal die are confined to high efficiency regions. This methodology is applied to a 20 W packaged GaN HEMT using internal control of input and output second-harmonic impedances to reach more than 70 of power-added-efficiency (PAE) on 30 relative bandwidth in S-band.

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Dates et versions

hal-00793351 , version 1 (22-02-2013)

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Citer

Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, et al.. Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band. Electronics Letters, 2012, 48 (13), pp.770-772. ⟨10.1049/el.2012.1654⟩. ⟨hal-00793351⟩

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