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Communication Dans Un Congrès Année : 2012

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Résumé

This paper presents a study of 4H-SiC UV photodetectors based on p +n thin junctions. Two kinds of p + layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm 2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5×10 -1 A/W @ 330 nm).
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Dates et versions

hal-00747301 , version 1 (31-10-2012)

Identifiants

  • HAL Id : hal-00747301 , version 1

Citer

Stéphane Biondo, Laurent Ottaviani, Mihai Lazar, Dominique Planson, Julian Duchaine, et al.. 4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747301⟩
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