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Communication Dans Un Congrès Année : 2010

Characterization of indium sulfide thin films containing copper

Résumé

The crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.
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Dates et versions

hal-00726160 , version 1 (29-08-2012)

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Nicolas Barreau, M. Tessier. Characterization of indium sulfide thin films containing copper. Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009, Apr 2009, San Francisco (CA), United States. pp.325, ⟨10.1557/PROC-1165-M08-21⟩. ⟨hal-00726160⟩
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