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Article Dans Une Revue Materials Science Forum Année : 2011

Graded Etched Junction Termination for SiC Thyristors

Résumé

In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².
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hal-00661479 , version 1 (19-01-2012)

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Gontran Pâques, Nicolas Dheilly, Dominique Planson, Rik W. de Doncker, Sigo Scharnholz. Graded Etched Junction Termination for SiC Thyristors. Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩. ⟨hal-00661479⟩
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