AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2011

AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

Abstract

An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.
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Dates and versions

hal-00632917 , version 1 (25-05-2021)

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Delphine Néel, Sylvain Sergent, Meletios Mexis, Diane Sam-Giao, Thierry Guillet, et al.. AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate. Applied Physics Letters, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩. ⟨hal-00632917⟩
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