SiC BJT driver applied to a 2 kW inverter: Performances and limitations
Résumé
The control of a SiC bipolar transistor may look like the control of its Si counterpart, but not quite in fact. This paper presents a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature. Performances and limitations of a 2 kW SiC-BJT based inverter are investigated.