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Communication Dans Un Congrès Année : 2010

SiC BJT driver applied to a 2 kW inverter: Performances and limitations

Dominique Tournier
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Pascal Bevilacqua
Pierre Brosselard
Dominique Planson
Bruno Allard

Résumé

The control of a SiC bipolar transistor may look like the control of its Si counterpart, but not quite in fact. This paper presents a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature. Performances and limitations of a 2 kW SiC-BJT based inverter are investigated.
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Dates et versions

hal-00579223 , version 1 (23-03-2011)

Identifiants

  • HAL Id : hal-00579223 , version 1

Citer

Dominique Tournier, Pascal Bevilacqua, Pierre Brosselard, Dominique Planson, Bruno Allard. SiC BJT driver applied to a 2 kW inverter: Performances and limitations. 6th CIPS, Mar 2010, Nuremberg, Germany. ⟨hal-00579223⟩
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