FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009
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hal-00524918 , version 1 (09-10-2010)

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  • HAL Id : hal-00524918 , version 1

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S. Puget, G. Bossu, C. Fenouillet-Beranger, P. Perreau, P. Masson, et al.. FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications. International Memory Workshop IMW), May 2009, Monterey, United States. ⟨hal-00524918⟩
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