First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Semiconductor Science & Technology Année : 2007

First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer

Résumé

This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 µm telecommunication window at room temperature. Its threshold current density is 320 A cm−2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.

Dates et versions

hal-00493037 , version 1 (17-06-2010)

Identifiants

Citer

Estelle Homeyer, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Karine Tavernier, et al.. First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer. Semiconductor Science & Technology, 2007, 22, pp.827-830. ⟨10.1088/0268-1242/22/7/028⟩. ⟨hal-00493037⟩
109 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More