First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer
Résumé
This paper presents experimental results obtained on a laser structure containing a single QD layer, epitaxially grown on InP(3 1 1)B substrate. The sample shows laser emission on the ground state in the 1.55 µm telecommunication window at room temperature. Its threshold current density is 320 A cm−2, which is relatively low for an InP-based QD laser. Its modal gain, attributed to a high QD density and low QD size dispersion, explains this first achievement of lasing with a single QD layer on an InP substrate.