Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

Résumé

For the first time, a laser emission at 1.55 mu m telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm(2).
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Dates et versions

hal-00491812 , version 1 (14-06-2010)

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Estelle Homeyer, Rozenn Piron, Frederic Grillot, Cyril Paranthoen, Olivier Dehaese, et al.. Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. LEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩. ⟨hal-00491812⟩
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