Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer - Archive ouverte HAL
Communication Dans Un Congrès Année : 2006

Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

Résumé

For the first time, a laser emission at 1.55 mu m telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm(2).

Domaines

Optique / photonique

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https://hal.science/hal-00491812

Soumis le : lundi 14 juin 2010-14:29:09

Dernière modification le : lundi 16 septembre 2024-17:52:04

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Dates et versions

hal-00491812 , version 1 (14-06-2010)

Identifiants

Citer

Estelle Homeyer, Rozenn Piron, Frederic Grillot, Cyril Paranthoen, Olivier Dehaese, et al.. Ultra low threshold at room temperature on 1.55 µm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. LEOS 2006 (Lasers & Eloctro-Optics Society), Oct 2006, Montreal, Canada. pp.870-71, ⟨10.1109/LEOS.2006.279083⟩. ⟨hal-00491812⟩

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