Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI - Archive ouverte HAL
Article Dans Une Revue IEEE Electron Device Letters Année : 2009

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

Résumé

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation. Both erbium (Er) and ytterbium (Yb) have been considered in the implant-before-silicide (IBS) and implant-to-silicide flavors. It is shown that the two schemes coupled with a limited thermal budget (500°C) produce an SB below the target of 0.1 eV. The implementation of IBS arsenic-segregated YbSi$_{1.8}$ junctions in an n-type SB-MOSFET is demonstrated for the first time resulting in a current-drive improvement of more than one decade over the dopant-free counterpart.

Domaines

Electronique
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Dates et versions

hal-00471974 , version 1 (24-09-2024)

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G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot. Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI. IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩
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