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Journal Articles Thin Solid Films Year : 2009

Chemical vapor deposition and characterization of nitrogen doped TiO2 thin films on glass substrates

Abstract

Photocatalytically active, N-doped TiO2 thin films were prepared by low pressure metalorganic chemical vapor deposition (MOCVD) using titanium tetra-iso-propoxide (TTIP) as a precursor and NH3 as a reactive doping gas. We present the influence of the growth parameters (temperature, reactive gas phase composition) on the microstructural and physico-chemical characteristics of the films, as deduced from X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and ultra-violet and visible (UV/Vis) spectroscopy analysis. The N-doping level was controlled by the partial pressure ratio R=[NH3]/[TTIP] at the entrance of the reactor and by the substrate temperature. For R=2200, the N-doped TiO2 layers are transparent and exhibit significant visible light photocatalytic activity (PA) in a narrow growth temperature range (375–400 °C). The optimum N-doping level is approximately 0.8 at.%. However, the PA activity of these N-doped films, under UV light radiation, is lower than that of undoped TiO2 films of comparable thickness.
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Dates and versions

hal-00445826 , version 1 (11-02-2022)

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C. Sarantopoulos, A. N. Gleizes, F. Maury. Chemical vapor deposition and characterization of nitrogen doped TiO2 thin films on glass substrates. Thin Solid Films, 2009, 518 (4), pp.1299-1303. ⟨10.1016/j.tsf.2009.04.070⟩. ⟨hal-00445826⟩
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