In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2009

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process

J. Pereira
  • Function : Author
L.E. Pichon
  • Function : Author
R. Dussart
Christophe Cardinaud
C.Y. Duluard
E.H. Oubensaid
  • Function : Author
P. Lefaucheux
  • Function : Author
M. Boufnichel
  • Function : Author
P. Ranson
  • Function : Author

Abstract

The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O-2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
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Dates and versions

hal-00432322 , version 1 (16-11-2009)

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J. Pereira, L.E. Pichon, R. Dussart, Christophe Cardinaud, C.Y. Duluard, et al.. In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process. Applied Physics Letters, 2009, 94 (7), pp.071501. ⟨10.1063/1.3085957⟩. ⟨hal-00432322⟩
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