Communication Dans Un Congrès Année : 2009

Complementary MOS structures for common mode EMI reduction

Résumé

The paper deals with the management and the reduction of conducted common mode EMI noise in power converters. Especially, it is presented how complementary P-N MOSFET structures, used in a specific manner, are able of great and natural common mode current reductions. The advantages obtained by the use of complementary MOSFET topologies are balanced with the additional conduction losses that P MOSFETs are responsible of. The paper presents these issues based on simulation and practical results.

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Dates et versions

hal-00422524 , version 1 (07-10-2009)

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Identifiants

  • HAL Id : hal-00422524 , version 1

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Hung Tran Manh, Jean-Christophe Crébier. Complementary MOS structures for common mode EMI reduction. EPE 09, Sep 2009, Barcelone, Spain. ⟨hal-00422524⟩

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