Characterization of Low-k SiOCH Dielectric for 45nm Technology and Link between the Dominant Leakage Path and the Breakdown Localization - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2008

Characterization of Low-k SiOCH Dielectric for 45nm Technology and Link between the Dominant Leakage Path and the Breakdown Localization

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hal-00386261 , version 1 (20-05-2009)

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  • HAL Id : hal-00386261 , version 1

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M. Vilmay, Daniel Roy, F. Volpi. Characterization of Low-k SiOCH Dielectric for 45nm Technology and Link between the Dominant Leakage Path and the Breakdown Localization. Materials for Advanced Metallization Conference 2008 (MAM2008), 2008, Germany. ⟨hal-00386261⟩

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