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Communication Dans Un Congrès Année : 2007

High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Pierre Brosselard
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Xavier Jordà
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Miquel Vellvehi
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Philippe Godignon
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J. P. Bergman
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B. Lambert
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Résumé

4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N+ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C.
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Dates et versions

hal-00369526 , version 1 (20-03-2009)

Identifiants

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Pierre Brosselard, Xavier Jordà, Miquel Vellvehi, Philippe Godignon, J. P. Bergman, et al.. High temperature behaviour of 3.5 kV 4H-SiC JBS diodes. ISPSD '07, May 2007, Jeju Island, South Korea. pp.285 - 288, ⟨10.1109/ISPSD.2007.4294988⟩. ⟨hal-00369526⟩
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