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Communication Dans Un Congrès Année : 2008

The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Pierre Brosselard
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A. P. Tomas
  • Fonction : Auteur
Nicolas Camara
J. Hassan
  • Fonction : Auteur
Xavier Jordà
  • Fonction : Auteur
Miquel Vellvehi
  • Fonction : Auteur
Philippe Godignon
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J. P. Bergman
  • Fonction : Auteur

Résumé

Abstract- 4H-SiC PiN diodes have been manufactured on a Norstel epitaxied P+ZN/N* substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at lµA regardless the active area (0.16 and 2.56 mm2). A differential on-resistance of 1.7 mOhm.cm2 was extracted at 15A-25°C. The recovery charge was only of 300 nC for a switched current of 15A at 300°C at a blocking voltage of 500V. 50% of the diodes exhibit a voltage shift of about IV, after a 60 hours DC- stress (25degC-225°C). The leakage current level remains unaffected after the DC stress.
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Dates et versions

hal-00369518 , version 1 (20-03-2009)

Identifiants

Citer

Pierre Brosselard, A. P. Tomas, Nicolas Camara, J. Hassan, Xavier Jordà, et al.. The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes. ISPSD '08, May 2008, Orlando, FL, United States. pp.237 - 240, ⟨10.1109/ISPSD.2008.4538942⟩. ⟨hal-00369518⟩
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