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Communication Dans Un Congrès Année : 2006

High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field Rings

Résumé

The continuous progress made over the past years in terms of material quality and key technological issues combined with a better understanding of the devices' physics have placed silicon carbide (SiC) devices in a position from where they can challenge the present day silicon (Si) solutions in high power/high temperature applications. Since they avoid gate oxide-related problems such as channel mobility and high temperature long term reliability typical of SiC MOSFETs, SiC JFETs are attractive candidates for applications requiring high power/high temperature operation. This paper reports for the first time experimental results of a 4H-SiC normally-on JFET using buried p+ gates and buried field rings (BFRs) in the termination region. The device uses a double layer epitaxial process with a novel, more highly doped buffer layer. The paper also investigates the high temperature operation (up to 300°C) of the device
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Dates et versions

hal-00369512 , version 1 (20-03-2009)

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A. Mihaila, F. Udrea, S. J. Rashid, Philippe Godignon, Pierre Brosselard, et al.. High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field Rings. ISPSD, 2006, Naples, Italy. pp.1 - 4, ⟨10.1109/ISPSD.2006.1666096⟩. ⟨hal-00369512⟩
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