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Communication Dans Un Congrès Année : 2007

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Résumé

It is well known from the literature published on Si devices that junction field effect transistors (JFETs) can be either operated in a unipolar mode (when the gate junction bias is less than 0.4 V) or in a bipolar mode (when the gate junction inject minority carriers into the channel/drift region to modulate its resistance)- The latter mode of operation is typically used to improve the on-state performance of normally-off JFETs. The aim of this paper is to investigate the bipolar mode of operation of 4H-SiC normally-on vertical JFETs. Both numerical and experimental results will be used to conclude whether the bipolar mode of operation offers any clear advantages to SiC normally-on JFETs. The influence of high temperature operation (up to 300°C) on the on-state characteristics will also be considered
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Dates et versions

hal-00369507 , version 1 (20-03-2009)

Identifiants

Citer

A. Mihaila, F. Udrea, S. J. Rashid, Philippe Godignon, Pierre Brosselard, et al.. Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs. International Semiconductor Conference, Sep 2006, Sinaia, Romania. pp.297 - 300, ⟨10.1109/SMICND.2006.284002⟩. ⟨hal-00369507⟩
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