Communication Dans Un Congrès Année : 2008

Electrical characterization of 5kV SiC bipolar diodes in switching transient regime

Résumé

A new experimental set-up is developed and validated to characterize high voltage diodes in switch transient regime. Parameters extracted from DMTVCA and OCVD techniques is validated in a buck converter on a resistive load. The experimental set-up enable to measure nice current and voltage transient characteristics, i.e. without noise and high parasitic wiring influence. Experimental results are confronted to device simulations and a good agreement is found.

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Dates et versions

hal-00369457 , version 1 (19-03-2009)

Identifiants

Citer

Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Sami Ghedira, et al.. Electrical characterization of 5kV SiC bipolar diodes in switching transient regime. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩. ⟨hal-00369457⟩
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