Communication Dans Un Congrès Année : 2007

1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang
  • Fonction : Auteur
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Pierre Brosselard
Mihai Lazar
Sigo Scharnholz
  • Fonction : Auteur

Résumé

Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material. The European manufacturer SiCrystal furnishes now some epiwafers for the fabrication of 1,2kV devices. In this paper we present 4H-SiC 1.2 kV pin diodes with a JTE termination realized on a SiCrystal epiwafer. The devices exhibit a blocking voltage of 1.2 kV, a current density of 420 A.cm(-2) and a specific differential series resistance of 4.4 m Omega.cm(2). The yield of fabricated diodes with a breakdown voltage greater 600 V is superior to 75%.

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Dates et versions

hal-00358819 , version 1 (04-02-2009)

Identifiants

Citer

Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremilleu, et al.. 1.2 kV pin diodes with SiCrystal epiwafer. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.901-904, ⟨10.4028/www.scientific.net/MSF.556-557.901⟩. ⟨hal-00358819⟩
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