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Article Dans Une Revue Sensor letters Année : 2008

Na+-implanted membrane for a capacitive sodium electrolyte-Insulator-Semiconductor microsensors

H. Barhoumi
  • Fonction : Auteur
R. Haddad
A. Maaref
  • Fonction : Auteur
J. Bausells
  • Fonction : Auteur
François Bessueille
Didier Léonard
Nicole Jaffrezic-Renault
Claude Martelet
  • Fonction : Auteur correspondant
  • PersonId : 839306

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N. Zine
  • Fonction : Auteur
Abdelhamid Errachid
  • Fonction : Auteur
  • PersonId : 839395

Résumé

Ion implanted Insulator-Semiconductor (IS) sensor that specifically detects Na+ ions have been developed using ion implantation technique. Na+ ions were directly implanted with ion energies 30, 45, and 60 keV into the IS (oxidized Si3N4/Si3N4/SiO2/P-Si) structures previously covered with a thin aluminum layer. X-ray photoelectron spectroscopy (XPS) characterization shows that sodium and aluminum ions were implanted into the oxidized Si3N4 insulating layer surface. Their atomic percentage depending on energy, fluence of the implanted ion and of the annealing temperature. The sen sitivity of the ion-implanted IS structure for Na+ and of some interfering (K+, Li+, H+, and NH4+) ions was investigated using high frequency capacitance-voltage measurements. Under optimal i mplantation conditions such as energy, fluence and annealing temperature, the developed sodium microsensor demonstrates quasi-nernstian sensitivity (50 +/- 2 mV/pNa) in the concentration range from 10(-3.7) to 10(-1) M and high lifetime greater than 16 months without any loss of sensitivity.
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Dates et versions

hal-00312915 , version 1 (26-08-2008)

Identifiants

Citer

H. Barhoumi, R. Haddad, A. Maaref, J. Bausells, François Bessueille, et al.. Na+-implanted membrane for a capacitive sodium electrolyte-Insulator-Semiconductor microsensors. Sensor letters, 2008, 6 (1), pp.204-208. ⟨10.1166/sl.2008.032⟩. ⟨hal-00312915⟩
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