A new method for growing crystals of SiB2.8-4 type silicon boride from a metallic melt. - Archive ouverte HAL Access content directly
Journal Articles Materials Research Bulletin Year : 1982

A new method for growing crystals of SiB2.8-4 type silicon boride from a metallic melt.

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hal-00305241 , version 1 (23-07-2008)

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  • HAL Id : hal-00305241 , version 1

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M. Bouchacourt, F. Thevenot. A new method for growing crystals of SiB2.8-4 type silicon boride from a metallic melt.. Materials Research Bulletin, 1982, 17, pp.1353-1358. ⟨hal-00305241⟩
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