Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2002

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

Jean-Francois Lampin
E. Lefebvre
  • Fonction : Auteur
M. Zaknoune
F. Mollot
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hal-00148648 , version 1 (23-05-2007)

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  • HAL Id : hal-00148648 , version 1

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D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot. Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density. Applied Physics Letters, 2002, 80, pp.4151-4153. ⟨hal-00148648⟩
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