Journal Articles
Applied Physics Letters
Year : 2002
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https://hal.science/hal-00148648
Submitted on : Wednesday, May 23, 2007-8:50:01 AM
Last modification on : Friday, March 24, 2023-2:52:48 PM
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- HAL Id : hal-00148648 , version 1
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D. Vignaud, Jean-Francois Lampin, E. Lefebvre, M. Zaknoune, F. Mollot. Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density. Applied Physics Letters, 2002, 80, pp.4151-4153. ⟨hal-00148648⟩
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