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Article Dans Une Revue Japanese Journal of Applied Physics Année : 2006

Mechanical and electrical analysis of a strained liner effect in 35nm FDSOI devices with ultra-thin silicon channels

Frédéric Boeuf
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Vincent Fiori
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Nicolas Loubet
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Pascal Gouraud
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Roland Pantel
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Résumé

We study the effects of a strained contact etch stop layer (CESL) on fully depleted (FD) silicon-on-insulator (SOI) devices with ultra thin silicon channels. As expected from extensive simulation analysis, the electrical results demonstrate that in spite of the raised source/drain architecture, the stress is effectively transferred from the liner into the underlying channel. Using a tensile liner for the n-type metal–oxide–semiconductor field effect transistor (nMOS) and a compressive liner for the p-type metal–oxide–semiconductor field effect transistor (pMOS), transistor performance enhancements of 10% and 17%, respectively, were obtained. Moreover, with a tensile (/compressive) liner, tensile (/compressive) edge effects become dominant for short devices whereas the stress becomes less tensile (/compressive) for longer devices. Indeed, the balance between these two contributions and the strain level in the channel are highly dependent on geometrical parameters (W, Lgate).
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hal-00145498 , version 1 (10-05-2007)

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Claire Haaser-Gallon, Claire Fenouillet-Beranger, Stéphane Denorme, Frédéric Boeuf, Vincent Fiori, et al.. Mechanical and electrical analysis of a strained liner effect in 35nm FDSOI devices with ultra-thin silicon channels. Japanese Journal of Applied Physics, 2006, 45 (45), pp.3058-3063. ⟨10.1143/JJAP.45.3058⟩. ⟨hal-00145498⟩
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