Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter
Résumé
Silicon carbide bipolar diodes fabricated by nitrogen implantation with a subsequent annealing at 1100 degrees C and passivated with a deposited oxide have been characterized. Capacitance- and current-voltage measurements have been made to analyze the quality of the junction. Admittance spectroscopy shows the presence of three peaks: two correspond to nitrogen and aluminum shallow levers; the third one has been more precisely studied by deep level transient spectroscopy. It presents an activation energy of E-v +/- 0.49 eV and is probably due to a hole trap created by the nitrogen implantation.