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Article Dans Une Revue Journal of Applied Physics Année : 1998

Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter

K. Ghaffour
  • Fonction : Auteur
S. Ortolland
  • Fonction : Auteur
K. Souifi
  • Fonction : Auteur
G. Guillot

Résumé

Silicon carbide bipolar diodes fabricated by nitrogen implantation with a subsequent annealing at 1100 degrees C and passivated with a deposited oxide have been characterized. Capacitance- and current-voltage measurements have been made to analyze the quality of the junction. Admittance spectroscopy shows the presence of three peaks: two correspond to nitrogen and aluminum shallow levers; the third one has been more precisely studied by deep level transient spectroscopy. It presents an activation energy of E-v +/- 0.49 eV and is probably due to a hole trap created by the nitrogen implantation.
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Dates et versions

hal-00141570 , version 1 (13-04-2007)

Identifiants

  • HAL Id : hal-00141570 , version 1

Citer

Christophe Raynaud, K. Ghaffour, S. Ortolland, Marie-Laure Locatelli, K. Souifi, et al.. Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter. Journal of Applied Physics, 1998, 84 (6), pp.3073-3077. ⟨hal-00141570⟩
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