Micro-irradiation experiments in MOS transistors using synchrotron radiation
Résumé
Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements.
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IEEE_T-NuSc_47-3_06-2000_574_MicroIrradiationExperiments.pdf (436.69 Ko)
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