Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2002

Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements

Karine Isoird
Mihai Lazar
Cm Johnson
  • Fonction : Auteur
N. Wright
  • Fonction : Auteur

Résumé

Extractions of barrier heights of 6H and 4H-SiC Schottky diodes have been performed on structures with various gate metallization, using both capacitance-voltage (C-V) and current-voltage (I-V) measurements. The sum of the two barriers extracted by C-V measurements on both n-type and p-type materials is found to be higher than the band gap energy E-G, whereas the one extracted by I-V is less than E-G. However, above room temperature, temperature variations of barrier heights are in agreement with the variations of E-G. We have also computed theoretical I-V characteristics using a two-barrier height model. By taking account of temperature variations of a large number of parameters, e.g., the carrier mobility, free carrier concentration, and barrier height, we have achieved a good fit with experimental data. The model is shown to be valid for n-type Schottky diodes over a wide range of temperatures (from 100 to 500 K).
Fichier non déposé

Dates et versions

hal-00141477 , version 1 (12-04-2007)

Identifiants

  • HAL Id : hal-00141477 , version 1

Citer

Christophe Raynaud, Karine Isoird, Mihai Lazar, Cm Johnson, N. Wright. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. Journal of Applied Physics, 2002, 91 (12), pp.9841-9847. ⟨hal-00141477⟩
59 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More