Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes
Résumé
Commercial power diodes are optimized to feature punch–through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found
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IEEE-TPEL_22-1_2007_13_BenSalah_ExperimentalAnalysis.pdf (3.65 Mo)
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