Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optics Communications Année : 2006

Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

Résumé

the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.
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Dates et versions

hal-00102190 , version 1 (29-09-2006)

Identifiants

Citer

Sébastien Forget, Frédéric Druon, François Balembois, Patrick Georges, Nicolas Landru, et al.. Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser. Optics Communications, 2006, 259, pp.816-819. ⟨10.1016/j.optcom.2005.09.053⟩. ⟨hal-00102190⟩
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