A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2013

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

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C. Fernandez
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F. Allibert
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C. Mazure
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hal-01001928 , version 1 (05-06-2014)

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A. Diab, C. Fernandez, A. Ohata, N. Rodriguez, I. Ionica, et al.. A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration. Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩. ⟨hal-01001928⟩
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